Discussion Samsung Exynos SoC thread

DrMrLordX · Sunday at 6:27 PM

FlameTail said:
But they can still pursue scaling technologies such as GAAFET and BSPD without EUV, right?

Maybe. I don't think they're actually doing that yet, though.

Doug S · Sunday at 9:53 PM

FlameTail said:
The roadblock for SMIC is EUV.

But they can still pursue scaling technologies such as GAAFET and BSPD without EUV, right?

BSPDN yes, but not GAAFET.

Or rather, the main point to doing GAAFET is that FinFET starts to become leaky if you shrink them down too much - and shrinking them down too much is what is enabled by EUV. Without EUV they can't shrink their FinFETs enough that it is worth going to GAAFET, and there is little benefit to doing GAAFET except to fix the problem of leaky FinFETs.

soresu · Monday at 4:43 AM

Doug S said:
and there is little benefit to doing GAAFET except to fix the problem of leaky FinFETs

GAAFET is just a classification of FETs, the upcoming Nanosheet/Ribbon FET/MBCFET being just one variant.

Nanosheet does give better performance over finFET, but loses some areal density at iso transistor pitch.

Forksheet (next before CFET) is a more advanced GAAFET variant which fixes the density issue at iso pitch, while giving even higher performance than Nanosheet.

Gideon · Monday at 5:42 AM

soresu said:
GAAFET is just a classification of FETs, the upcoming Nanosheet/Ribbon FET/MBCFET being just one variant.

Nanosheet does give better performance over finFET, but loses some areal density at iso transistor pitch.

Forksheet (next before CFET) is a more advanced GAAFET variant which fixes the density issue at iso pitch, while giving even higher performance than Nanosheet.

Here is a nice illustration for that from this article

soresu · Monday at 8:18 AM

Gideon said:
Here is a nice illustration for that from this article

Yeah I follow the imec stuff pretty often.

Discussion Samsung Exynos SoC thread

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