If you extract things like media engines, Infinity Fabric IO/PHY, PCIe and reduce the amount of chip-to-chip interfaces you get much more usable Die area. At the same time, energy efficiency gets improved. Especially if you compare it to a 6x Base Die configuration (Die-to-Die interconnects, increased bandwidth requirements, pJ/bit). And I don't know if AMD sticks to CoWoS or changes back to EFB like used on MI250X.
The current Base Die is 13 x 29mm according to AMD. If you go beyond 800mm2 and exctract before mentioned IP-Blocks, you might land at 1.3x more usable area. Combined with N4 instead of N6 and 6um SoIC instead of 9um SoIC the gains are quite decent.
The same applies to the Top Die. You can now increase its Die Size by 1.3x (more stuff can be kept on same chip) and N3 greatly increases transistor density.
Another benefit: You do not need two Base Die version (normal and mirrored).
If you go forward to MI400 you could extend that to 12x HBM stacks and possible 3x Base Die, I don't know. But increased usable Die area and no need for Base Die mirroring stays as benefits. It would then somehow look like Clearwater Forest from Intel. But with HBM4 and much bigger Die as additions.
And maybe as an extra:
You could more easily switch or extend your Infinity Fabric Phy with e.g. LPDDR5/6 PHY and add much more and cheaper memory capacity