Not really sure where you are going with this Nosta...physically the transistors are different, and electrically they are different.
The implants are different (both in speciation and in dosage), the isolation spacers are physically different (to engineer the leakage control), etc, etc.
They are independently and separately engineered, sharing little in common in the FEOL outside of subtrate choice.
Vnom is targeted differently, IDDQ is engineered to be different, etc etc. I really don't see how you could make the claims you do above.
None of that seperates them from the physics limits of the baseline.
Marketing a node with very low leakage as a low power node is completely the opposite of previous generation.
32nm PDSOI/22nm PDSOI = High Performance nodes
14nm FDSOI/10nm FDSOI = Low Power nodes
^-- marketing.
Adding HKMG doesn't make your node high performance it makes it lower power. Calling a FinFET which has pretty high leakage and poor leakage control, a low power node is completely off the walls insane.
You are not increasing Vddnom per generation for higher performing devices with higher leakage, you are decreasing Vddnom per generation for higher performing devices with lower leakage.
Low Power = High Vnom, High power consumption.
High Performance = Low Vnom, Low power consumption.
There is something completely wrong with the foundry industry.
Peak high performance and peak low power can only be on nodes with the lowest power consumption and the lowest leakage.
Thus the nomenclature of nodes are PURELY based on cost of the node.
FDSOI is the cheapest and FinFETs are the most expensive.
28nm-LPS = Lowest Cost
28nm-SLP = Higher Cost than LPS.
28nm-LPH = Higher Cost than LPH.
28nm-HPP = Higher Cost than LPH.
28nm-SHP = Higher Cost than HPP.
While going up the higher cost tree we are seeing lower and lower power consumption. With higher and higher leakage control.
FDSOI and FinFETs break this cost tree;
FinFETs you get weak high performance and weak low power.
FDSOI you get peak high performance and peak low power.
FinFETs drive magnitudes more current to achieve the same clock rates as FDSOI.
Yet, FinFET is the low power node.