Ok, so the lower voltage needed, e.g, for Polaris, at same clock is due only to transconductance/capacitance balance? Vth between 28nm and 14nm was not lowered even a bit?
I didn't know this... I ever thought that also Vth would drop...
So RVT, HVT and LVT transistors have the same Vth on both processes?
And the sLVT transistors, unique to the 14nm FF process? Is their Vth not lower than 28nm LVTs?
Yes, lower voltage is allowed by higher transconductance because speed is the ratio gm/C with gm being the transconductance and C the capacitance.
Tranconductance of a transistor is the slope of Vin/Iout, in plain words the resulting output current in function of an input voltage, higher transconductance mean that the device has higher output current for a given input voltage, so it will charge the driven capacitance faster due to this higher delivered current.
If transconductance is not high enough then the transistor conduction can be increased only by mean of higher supply voltage wich will allow higher drive voltages, but will also increase the energy stored in the switching capacitances and hence losses.
Because fets transconductances are a square law, meaning that the output current increase as the square of the input voltage, doubling the conduction and hence speed (or reciprocally halving the transistor resistance) by a factor of X will require increasing voltage by only sqrt(X), at least in the efficient part of the voltage/frequency curve.
As for finfets Vths they are not lower than planar, the difference is that finfets are technically multigate devices that allow both better conduction when switched on and lower leakage when transistors are switched off, this is independant of the Vth itself and has its source in the multiple gating.
The RVT, HVT and LVT distinction is the same for both process in the limits of the process characteristics, wether it s planar or Finfet a LVT device is a low Vth device whose role is to switch faster but at the expense of (much) more leakage, FTR leakage variation from RVT to sLVT should be something like 10^6, so it s obvious that a design cant use only fast transistors, it would be useless anyway for most part of the circuitry.