- Jun 2, 2006
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It is rather old, but I havent seen it here, yet:
Do we have similar data of GF's 28nm process? Not sure if they have been posted somewhere.
http://www-03.ibm.com/technology/news/iedm_2012.html22nm High-Performance SOI Technology Featuring Dual-Embedded Stressors, Epi-Plate High-K Deep-Trench Embedded DRAM and Self-Aligned Via 15LM BEOL, IBM Semiconductor Research and Development Center
Source: SA-forumIn the paper the key design rules are given as follows:
Contacted gate pitch: 100 nm
N-P Active Space: 72
Metal 1-5 Pitch: 80nm
6-7: 144 nm
8-10: 288nm
11-13:640nm
14-15: 2400nm
Do we have similar data of GF's 28nm process? Not sure if they have been posted somewhere.