Interconnects generally get worse as they are made smaller, no? EUV should allow denser interconnects to be made more cheaply (i.e. without expensive multi-patterning), but I would imagine solving the performance problems with respect to tighter interconnects has little to do with lithography...
It is simply a matter of scaling, literally.
As you make the wire smaller in width and height, the max current it can carry without creating reliability issues decreases.
Make the wire narrower (increase metal density by decreasing pitch) but keep it tall (don't decrease the metal thickness) and you will increase the capacitance, which slows down the circuit.
But, if you can scale down the pitch (make the wire narrower), the operating voltage, and the run-length then you can net-net to essentially negligible performance impact from the interconnect.
This is why you see more and more metal layers being added to process nodes over time. Adding metal layers increases cost and cycle time, but are the single-most easiest and straightforward way of alleviating interconnect induced bottlenecks.
You stop adding metal layers to your node when the incremental cost adder of adding metal layer N+1 to the stack no longer brings with it an acceptable incremental increase in performance.
In other words, there is a good reason today's process nodes don't have 30 metal levels (even though there are no technical problems preventing them from having that many), and an equally good reason they don't have just 3 metal levels.
To whatever extent the interconnect negatively handicaps or limits the operating frequencies of today's chips, that handicap and impact exists because of an economic argument and decision made by business leaders, not because of a technical or engineering limits put in place by process node development engineers.
(A real life example, as a process development engineer, myself and two other interconnect engineers successfully developed and implemented air-gap interconnects for the 65nm node, awarded patents and everything for them, but management elected to not implement them into production because the performance boost that came from the lowered capacitance wasn't something they felt the customer would be willing to pay extra for in the end product, so it was shelved for a later node...no technical limit, R&D was complete, but a decision was made based purely on economics and ROI. Please don't think I'm trying to take credit in any way for Intel's 14nm air-gap technology, I'm sure they either licensed the IP from TI or found other novel and unique ways to implement the same end result. I'm just excited to see air-gap technology finally making it into a consumer device! Can't wait to own one )