Originally posted by: AMDxx165xxfx60
I have an Ultra-D NF4 / opty 165 / and OCZ value VX with the bh5 chips.
my OCZ can do 200 FSB 2-2-2-6 with 3.0v , but anything higher then 200 FSB is a pain.
i'm currently on the 704-2bt bios.
right now i'm running my ram @ 229FSB 2-2-2-6 (280HTT w/ a 166 divider)
CPC enabled
trc @ 14
trfc @ 16
trrd @ 4
twr @ auto
trtw @ 2
tref @ 3120
twcl @ 1
dbi @ enabled
i am not actively cooling the ram.
so what i'm trying to get at is what bios should i use?
At what voltage should i start actively cooling?
nd what are the average settings for OCZ value VX?
i'm just trying to push it to a stable 239 FSB with a 2-2-2-6 timing which shouldn't be to hard to do judging from other peoples results.
***update***
i tried cooling my ram with a large room fan and it put me stable @ 229 FSB 2-2-2-6 3.0v with the settings above
how ever i tried 239 and i get errors on superpi on core1 , i've tried 3.0v to 3.3v and it had no luck.
I've superpi'd my processor to 2.6Ghz and the ram cannot pass memtest at 239, suggestions?
Give these timings a try. You may not need 3.3V to hit 239FSB so start lower and work your way up until you find stability. Cooling is a must once you hit 3.0V.
Let me know how it works out
Genie BIOS Settings:
FSB Bus Frequency - 250
LDT/FSB Frequency Ratio - 4X
CPU/FSB Frequency Ratio - 11X
PCI eXpress Frequency - 100Mhz
CPU VID StartUp Value - 1.50V
CPU VID Control - 1.35V
CPU VID Special Control - Above VID * 123%
LDT Voltage Control - 1.30v
Chip Set Voltage Control - 1.50v
DRAM Voltage Control - 3.30v
DRAM Configuration Settings:
DRAM Frequency Set - 200 (DRAM/FSB:1/01)
Command Per Clock (CPC) - Enable
CAS Latency Control (Tcl) - 2.0
RAS# to CAS# delay (Trcd) - 02 Bus Clocks
Min RAS# active time (Tras) - 06 Bus Clocks
Row precharge time (Trp) - 02 Bus Clocks
Row Cycle time (Trc) - 07 Bus Clocks
Row refresh cyc time (Trfc) - 16 Bus Clocks
Row to Row delay (Trrd) - 02 Bus Clocks
Write recovery time (Twr) - 03 Bus Clocks
Write to Read delay (Twtr) - 02 Bus Clocks
Read to Write delay (Trwt) - 02 Bus Clocks
Refresh Period (Tref) - 3120
Write CAS Latency (Twcl) - Auto
DRAM Bank Interleave - Enabled
DQS Skew Control - Auto
DQS Skew Value - 0
DRAM Drive Strength - Level 8
DRAM Data Drive Strength - Level 2
Max Async Latency - 7ns
DRAM Response Time - Fastest
Read Preamble Time - Auto
IdleCycle Limit - 16 Cycles
Dynamic Counter - Disable
R/W Queue Bypass - 16 x
Bypass Max - 07 x
32 Byte Granularity - Disable(4 Bursts)