I got one 512 MB DTL Samsung PC2700, 0221 batch. Burned them in with Memtest overnight, I think at 166, 2.5 volts, fastest settings.
On a yucky MSI 645E MAX-LRU board (waiting on the SIS648 chipset, maybe this week in Akihabara for the Abit!): 170, 2-2-2-5-1, and darn thing will do DDR400 at 2.5-3-3-6-1. Sandra scores are around 2650/2650. I think I needed 2.8 volts at DDR400, 2.5 at 170.
On a P4B266-E, haven't tested 1:1 since I'm locked out at 2.5-3-3-7 anyway, but it will do DDR413 at those settings. Sandra scores are typical of that setting for that board:3100/3000. Stage 1 jumper on for the ram voltage. Not sure what that means voltage-wise.
I bet if I run this stick on a P4S533 (which I got rid of), have a feel it will probably do 200, 2-2-2-5-1.
I am burning in 2-256 MB DTL sticks now, dated 0224. They look to be pretty good. They did around 170, 2-2-2-5-1 and 193, 2.5-3-3-7 out of the box.
BTW, tested a Corsair XMS3200, Rev. 1.2 (Samsung C chips, not Winbond), and they will not do DDR400 on the MSI board, even though the DTL stick did it. However, this 512 MB stick will do DDR426 on the P4B266-E! Sandra scores are 3200/3100. The DTL stick wouldn't even post at DDR426 on this board. I'm running 160 FSB, 3:4 using the BIOS workaround. Tested stable in all my 3D stress tests. This is the best combo I can do with my DDR rigs. Knocking on 16k 3DMark2000 scores with my Ti 4600.