Slide 18 in that lecture deck does not say anything about the TSMC 16nm FinFET process technology. In fact, the TSMC finFET process technology that is described at IEDM 2010 is different from the 16nm FinFET process technology. The TSMC data on slide 18 are from a high performance 22/20nm CMOS logic using the finFET transistor architecture having an SRAM cell size of 0.100 μm2. The TSMC 16nm FinFET technology has an SRAM cell size of 0.070 μm2.
You can, however, do an apples to apples comparison between Intel 22nm FinFET and TSMC 16nm FinFET low power transistor characteristics.
The details of Intel 22nm FinFET process are availablee on slide 19 in that lecture deck and elsewhere on the Internet:
Jyunichi Oshita at Nikkei BP Semiconductor Research covered the details of the TSMC 16nm FinFET process:
http://techon.nikkeibp.co.jp/english/NEWS_EN/20131213/322503/
In both cases the supply voltage is 0.75V and off leakage current is 30pA/μm. The TSMC nMOS and pMOS appear to perform better. Furthermore, TSMC claims a 15% speed boost and 30% power reduction for its 16FF+ (FinFET Plus) technology.
It may also be a good idea to keep in mind that Intel (and following them TSMC) normalize the drive current (Ion) in their publications, and the Ion comes at the price of higher capacitance. Unfortunately, neither Intel nor TSMC is reporting the capacitance. In order to calculate the speed boost you have to divide the current or gm by capacitance.