Question Zen 6 Speculation Thread

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FlameTail

Diamond Member
Dec 15, 2021
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Which means?

Is this separate from L1/2/3?
How do you not know what System Level Cache is. I am amazed.

System Level Caches are used in SoCs (which combine different components like CPU, GPU, NPU, ISP, Media Engine, Display Engine etc..). The System Level Cache is the last cache level on the chip (after which is DRAM), and it is a common cache that can be accessed by any of the subunits in the SoC.
 
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soresu

Platinum Member
Dec 19, 2014
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How do you not know what System Level Cache is. I am amazed.

System Level Caches are used in SoCs (which combine different components like CPU, GPU, NPU, ISP, Media Engine, Display Engine etc..). The System Level Cache is the last cache level on the chip (after which is DRAM), and it is a common cache that can be accessed by any of the subunits in the SoC.
Sounds like it's basically just a different name for eDRAM.

Unless it is actually SRAM?

Sounds like a perfect candidate for SOT-MRAM to replace if so.
 

GTracing

Junior Member
Aug 6, 2021
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Sounds like it's basically just a different name for eDRAM.

Unless it is actually SRAM?

Sounds like a perfect candidate for SOT-MRAM to replace if so.
The system level cache is just SRAM. It's sometimes called the LLC (last level cache). Apple's SOCs and most android SOCs have one. It can be used by GPU, NPU, and other coprocessors, whereas L1, L2, and L3 can generally only be used by the CPU.

I haven't heard of SOT-MRAM, but I'm skeptical of new memory technologies. It seems like one pops up every year.
 

soresu

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Dec 19, 2014
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I haven't heard of SOT-MRAM, but I'm skeptical of new memory technologies. It seems like one pops up every year.
It stands for Spin-Orbit Torque Magnetic RAM.

It's an evolution on STT-MRAM, which is currently the only significant MRAM type in production I believe.

It's not quite as fast/low latency as SRAM, but it's very close, and unlike SRAM it is non volatile.

Unfortunately the current iteration is similar in area to SRAM, which is not very helpful.

The coming VGSOT-MRAM further improves it by switching to purely voltage switched write operations, which allows a much smaller cell.
 
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SarahKerrigan

Senior member
Oct 12, 2014
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Sounds like it's basically just a different name for eDRAM.

Unless it is actually SRAM?

Sounds like a perfect candidate for SOT-MRAM to replace if so.

eDRAM refers to a specific type of cell technology. SLC is a topological term. SLC's are usually memory-side caches and may be entirely unaware of virtual memory, whereas "normal" cache levels are tightly bound with the core complex.

It stands for Spin-Orbit Torque Magnetic RAM.

It's an evolution on STT-MRAM, which is currently the only significant MRAM type in production I believe.

It's not quite as fast/low latency as SRAM, but it's very close, and unlike SRAM it is non volatile.

Unfortunately the current iteration is similar in area to SRAM, which is not very helpful.

The coming VGSOT-MRAM further improves it by switching to purely voltage switched write operations, which allows a much smaller cell.

AFAIK toggle MRAM volumes are enormously higher than STT-MRAM.
 

Doug S

Platinum Member
Feb 8, 2020
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I haven't heard of SOT-MRAM, but I'm skeptical of new memory technologies. It seems like one pops up every year.

Agreed. They acquire more letters in their acronyms as time passes, but I'm still waiting to see one that has any chance of becoming something more than a niche.

If one appeared that did promise to be a real and fully scalable alternative to SRAM and worked with standard litho processes, then you'd see Intel, TSMC, Apple, Qualcomm or AMD move to acquire them and gain that advantage to themselves.
 

Joe NYC

Platinum Member
Jun 26, 2021
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Why would it? N6 is only ever worth it for pure SRAM and HSIO applications in this day and age.

There is a plenty of IO, analog, SRAM in, say Strix Halo SoC.

AMD competitive advantage has been chiplets and 3D stacking, and these 2 advantages allow use of less expensive (N6) vs. the advanced node, which in Strix Halo could be N3E - or twice as expensive.

There is already talk of potential further price increases on N3 and capacity constrains.
 

soresu

Platinum Member
Dec 19, 2014
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Agreed. They acquire more letters in their acronyms as time passes, but I'm still waiting to see one that has any chance of becoming something more than a niche.
Most of the acronyms are pretty straightforward (the S and 2nd T is STT and SOT are both spin and torque) when you learn spintronics terminology.

The same baseline tech was used to develop advanced hard disk drive heads, so actually the tech is very old and very much the opposite of niche.

Each new named device type is just an evolution of the last, much as we have seen in the evolution of HDD read/write heads over the decades.

MRAM has just not broken into mass volume yet in the solid state device market, because everyone and their dog are far too financially invested in NAND flash to devote significant resources to something else that isn't extremely close in design and materials, thus allowing for an easy switch without mass retooling, if not brand new fabs.

It also must be noted that SRAM doesn't easily mesh into monolithic 3D device types currently, while various such designs have been proposed over the last decade+ in relation to solid state magnetic memory.
 
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soresu

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Dec 19, 2014
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If one appeared that did promise to be a real and fully scalable alternative to SRAM and worked with standard litho processes
Standard processes are becoming less of a constraint as the chiplet paradigm evolves with ever increasing interconnect density.

V cache is already allowing them to use an SRAM optimised variant of a cheaper node to pad the L3 cache.

In another 10 years I wouldn't be surprised to see both L2 and L3 become part of a vertical stack exclusively, with only L0/1 remaining on die with the logic.

When that happens as long as another contender can keep up with SRAM in speed/power then it will be open season for new memory types to move in on the game.
 
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SpudLobby

Senior member
May 18, 2022
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Agreed. They acquire more letters in their acronyms as time passes, but I'm still waiting to see one that has any chance of becoming something more than a niche.

If one appeared that did promise to be a real and fully scalable alternative to SRAM and worked with standard litho processes, then you'd see Intel, TSMC, Apple, Qualcomm or AMD move to acquire them and gain that advantage to themselves.
Yep, feel the same as Doug. I mean, eventually if something does come, there might be a very slight lag time from R&D to an early use, but we’d see at least someone using it early on or investing in it. Not seeing that with any of this stuff. (Tsv cache aside)
 

Doug S

Platinum Member
Feb 8, 2020
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The same baseline tech was used to develop advanced hard disk drive heads, so actually the tech is very old and very much the opposite of niche.

I was referring to "niche" as the place these various technologies have in the overall memory marketplace. The various MRAM technologies have their niches in various markets like automotive, but their place is not and never will be as a replacement for DRAM in the mainstream mobile/PC market.
 
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Joe NYC

Platinum Member
Jun 26, 2021
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No?
It barely has any PCIe and it's a power-sensitive part aka caches over 2.5D is a no-go.

Maybe there is only a limited I/O and analog because SoC is an expensive N3 silicon.
Maybe, if given some ~75 mm2 of M2, the designers would go wild with IO, including networking all sorts of USB / Thunderbolt.
This along with memory controllers and 64 to 128 MB of SLC.

In theory, the Strix Halo successor could break up the SOC die into 2 dies - N2 or N3 and N6, each ~150 mm2, 3D stacked. Each die (on its node) would minimize its disadvantages and maximize its advantages.

Ugh no, their core IP is just good.
Other voodoo is icing on the cake.
 

leoneazzurro

Golden Member
Jul 26, 2016
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Maybe there is only a limited I/O and analog because SoC is an expensive N3 silicon.
Maybe, if given some ~75 mm2 of M2, the designers would go wild with IO, including networking all sorts of USB / Thunderbolt.
This along with memory controllers and 64 to 128 MB of SLC.

In theory, the Strix Halo successor could break up the SOC die into 2 dies - N2 or N3 and N6, each ~150 mm2, 3D stacked. Each die (on its node) would minimize its disadvantages and maximize its advantages.
Mostly the lack of I/O is because the PCI-E x16 for the GPU are routed internally towards the integrated one, as this part is not developed for the use with an external graphics card. As this is a laptop part (even if premium ones) the amount of residual I/O is probably considered as more than enough for that class of devices.
 
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leoneazzurro

Golden Member
Jul 26, 2016
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PCIe x8 is enough for most laptop dGPUs, no?
Probably, but as said a discrete GPU will defeat the purpose of such an APU. At that point, better focus on a Fire Range laptop which would be noticeably cheaper and it would have more available PCI-E lines if someone really needs those in a laptop.
 
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FlameTail

Diamond Member
Dec 15, 2021
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Imagine Strix Point successor with LPDDR6.

136 GB/s -> 228 GB/s memory bandwidth (+67% uplift)

+ SLC cache...

We could be looking at double the iGPU performance..
 
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